MRF7S19120NR1
13
RF Device Data
Freescale Semiconductor
PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following documents and software to aid your design process.
Application Notes
?
AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
?
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
?
AN3789: Clamping of High Power RF Transistors and RFICs in Over--Molded Plastic Packages
Engineering Bulletins
?
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
?
Electromigration MTTF Calculator
For Software, do a Part Number search at http://www.freescale.com, and select the ?Part Number? link. Go to the Software &
Tools tab on the part?s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Sept. 2007
?
Initial Release of Data Sheet
1
Jan. 2009
?
Updated Fig. 14, CCDF W--CDMA 3GPP, Test Model 1,
64 DPCH, 50% Clipping, Single--Carrier Test
Signal, to better represent
production test signal, p. 8
?
Updated Fig. 16, Series Equivalent
Source and Load Impedance, large signal Zsource
impedance
parameters to better reflect measured values, p. 9
2
Dec. 2009
?
Updated Charge Device Model ESD from Class IV to
III to reflect actual Qual Report results, p. 2
?
Fig. 14, CCDF W--CDMA IQ Magnitude Clipping, Single--Carrier Test Signal and Fig. 15, Single--Carrier
W--CDMA Spectrum updated to show the undistorted input test signal, p. 8
?
Added AN1907, Solder Reflow Attach Method for High Power RF Devices in Plastic Packages and
AN3789, Clamping of High Power RF Transistors and RFICs in Over--Molded Plastic Packages to Product
Documentation, Application Notes, p. 13
?
Added Electromigration MTTF Calculator availability to Product Software, p. 13
3
Mar. 2011
?
Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification
number, PCN13628, p. 1, 2
?
Fig. 13, MTTF versus Junction Temperature removed, p. 8. Refer to the device?s MTTF Calculator
available at freescale.com/RFpower. Go to Design Resources > Software and Tools.
相关PDF资料
MRF7S19170HSR5 IC MOSFET RF N-CHAN NI-880S
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相关代理商/技术参数
MRF7S19120NR1_09 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
MRF7S19170HR3 功能描述:射频MOSFET电源晶体管 HV7 1.9GHZ 50W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF7S19170HR3_08 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF7S19170HR5 功能描述:射频MOSFET电源晶体管 HV7 1.9GHZ 50W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF7S19170HS 制造商:Freescale Semiconductor 功能描述: 制造商:FREESCALE-SEMI 功能描述:
MRF7S19170HSR3 功能描述:射频MOSFET电源晶体管 HV7 1.9GHZ 50W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF7S19170HSR5 功能描述:射频MOSFET电源晶体管 HV7 1.9GHZ 50W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF7S19210HR3 功能描述:射频MOSFET电源晶体管 HV7 1.9GHZ 28V 63W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray